Transistors based on two-dimensional materials for future integrated circuits

Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors

Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS2) flakes with unique distorted 1T st...

Two-dimensional semiconductors for transistors

| In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited by the rate at which heat, generated from static power, is dissipated. The increase in static power and the leakage of current between the source and drain electrodes that causes this increase, are referred ...

Pentacene integrated thin-film transistors and circuits

Three-dimensional integrated circuits

integrated circuits A. W. Topol D. C. La Tulipe, Jr. L. Shi D. J. Frank K. Bernstein S. E. Steen A. Kumar G. U. Singco A. M. Young K. W. Guarini M. Ieong Three-dimensional (3D) integrated circuits (ICs), which contain multiple layers of active devices, have the potential to dramatically enhance chip performance, functionality, and device packing density. They also provide for microchip architec...

Performance Analysis of Reversible Sequential Circuits Based on Carbon NanoTube Field Effect Transistors (CNTFETs)

This study presents the importance of reversible logic in designing of high performance and low power consumption digital circuits. In our research, the various forms of sequential reversible circuits such as D, T, SR and JK flip-flops are investigated based on carbon nanotube field-effect transistors. All reversible flip-flops are simulated in two voltages, 0.3 and 0.5 Volt. Our results show t...